Characterization and analysis of two-dimensional hydrogenated nanocrystalline-diamond metal oxide semiconductor field effect transistor (MOSFET) using different surface charge models with device simulation

A. Reem, A. Mohammed, Quang N. Nguyen, H. Kawarada

研究成果: Conference contribution

抄録

Thanks to the unique properties, nanocrystalline-diamond is a valuable material that is widely used in nano-electronic device fabrication to enable the new promising power device applications in the near future. In general, the hydrogenated-(C-H) nano-diamond metal oxide semiconductor (MOSFET) depicts the normally- on status (depletion mode). In this paper, to confirm normally-on operation and show the characterization of normally-off operations with a controlled gate of the power device and study the corresponding impact, we simulate the two-dimensional (2D) C-H nano-diamond MOSFET under several surface charge models' impact. The enhancement mode, called normally-off, is attained to realize a safety point of the power device. The results also show the shifting tendency of the threshold voltage to a negative value with a positive charge model, given that, in principle, this state is impractical without a donor doping or oxidation layer.

本文言語English
ホスト出版物のタイトルNANO 2020 - 20th IEEE International Conference on Nanotechnology, Proceedings
出版社IEEE Computer Society
ページ376-377
ページ数2
ISBN(電子版)9781728182643
DOI
出版ステータスPublished - 2020 7
イベント20th IEEE International Conference on Nanotechnology, NANO 2020 - Virtual, Online, Canada
継続期間: 2020 7 292020 7 31

出版物シリーズ

名前Proceedings of the IEEE Conference on Nanotechnology
2020-July
ISSN(印刷版)1944-9399
ISSN(電子版)1944-9380

Conference

Conference20th IEEE International Conference on Nanotechnology, NANO 2020
CountryCanada
CityVirtual, Online
Period20/7/2920/7/31

ASJC Scopus subject areas

  • Bioengineering
  • Electrical and Electronic Engineering
  • Materials Chemistry
  • Condensed Matter Physics

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