Characterization of anisotropic strain relaxation after isolation for strained SGOI and SiGe/Si structure with newly developed high-NA and oil-immersion Raman method

Koji Usuda*, Tsutomu Tezuka, Daisuke Kosemura, Motohiro Tomita, Atsushi Ogura

*この研究の対応する著者

研究成果: Article査読

9 被引用数 (Scopus)

抄録

Local anisotropic strain relaxation at the free edge of the stained SiGe layers after isolation of strained SiGe layers was evaluated using the high-NA and oil-immersion Raman method adopting high numerical aperture (NA:1.4) lens and oil immersion techniques. It was confirmed that forbidden optical phonon mode (TO) can be effectively excited with the technique, and that the anisotropic strain measurement was realized for the strained-SiGe layers. It was found that the strain was more significantly relax in St-SGOI than in St-SiGe around each edge. The result implies that the relaxation mechanism of the SiGe mesas on the SiO2-Box layer and on the Si substrate may be different from each other.

本文言語English
ページ(範囲)46-49
ページ数4
ジャーナルSolid-State Electronics
83
DOI
出版ステータスPublished - 2013
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学
  • 材料化学

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