Characterization of APD-PIN photodiodes using InAs/InAlGaAs quantum-dot absorption layer

T. Umezawa, K. Akahane, A. Kanno, T. Kawanishi

研究成果: Conference contribution

1 引用 (Scopus)

抜粋

We found avalanche multiplications in InAs/InAlGaAs quantum-dot PIN photodiodes, and characterized the temperature dependence of I-V curves, the multiplication factors and the RF responses.

元の言語English
ホスト出版物のタイトル2013 Conference on Lasers and Electro-Optics, CLEO 2013
出版者IEEE Computer Society
ISBN(印刷物)9781557529725
出版物ステータスPublished - 2013 1 1
イベント2013 Conference on Lasers and Electro-Optics, CLEO 2013 - San Jose, CA, United States
継続期間: 2013 6 92013 6 14

出版物シリーズ

名前2013 Conference on Lasers and Electro-Optics, CLEO 2013

Other

Other2013 Conference on Lasers and Electro-Optics, CLEO 2013
United States
San Jose, CA
期間13/6/913/6/14

    フィンガープリント

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

これを引用

Umezawa, T., Akahane, K., Kanno, A., & Kawanishi, T. (2013). Characterization of APD-PIN photodiodes using InAs/InAlGaAs quantum-dot absorption layer. : 2013 Conference on Lasers and Electro-Optics, CLEO 2013 [6833441] (2013 Conference on Lasers and Electro-Optics, CLEO 2013). IEEE Computer Society.