Characterization of capacitance-voltage features of Ni/diamond Schottky diodes on oxidized boron-doped homoepitaxial diamond film

Y. G. Chen, M. Ogura, H. Okushi, Naoto Kobayashi

研究成果: Article査読

17 被引用数 (Scopus)

抄録

The electrical properties of Ni/diamond Schottky diodes fabricated on oxidized boron-doped homoepitaxial diamond film have been studied in order to investigate the electrical behavior of diamond-based electronic devices. The current-voltage (I-V) characteristics of the Ni-Schottky contacts to the boron-doped homoepitaxial diamond film show excellent rectification properties. The capacitance-voltage (C-V) features of the Ni/diamond Schottky diodes were characterized in the frequency range from 10-3 to 2 × 105 Hz. The C-V measurements indicate that the space charge density (NI) and built-in potential (Vd) values are approximately 6.0 × 1016 cm-3 and 1.25 V, respectively, and show weak frequency dependence in the range from 10-3 to 104 Hz. Capacitance-frequency measurement at zero bias indicated that the degrading capacitance at high frequency (> 104 Hz) is primarily due to the high series resistance of the homoepitaxial diamond film.

本文言語English
ページ(範囲)1340-1345
ページ数6
ジャーナルDiamond and Related Materials
12
8
DOI
出版ステータスPublished - 2003 8
外部発表はい

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

フィンガープリント 「Characterization of capacitance-voltage features of Ni/diamond Schottky diodes on oxidized boron-doped homoepitaxial diamond film」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル