Characterization of diamond metal-insulator-semiconductor field-effect transistors with aluminum oxide gate insulator

Kazuyuki Hirama, Shingo Miyamoto, Hiroki Matsudaira, Keisaku Yamada, Hiroshi Kawarada, Toyohiro Chikyo, Hideomi Koinuma, Ken Hasegawa, Hitoshi Umezawa

    研究成果: Article

    28 引用 (Scopus)

    抜粋

    Metal-insulator-semiconductor field-effect transistors (MISFETs) with aluminum oxide as a gate insulator have been fabricated on a hydrogen-terminated diamond surface using its surface conductive layer. The aluminum oxide gate insulator was deposited on the diamond surface by the pulsed laser deposition method. The on-off ratio measured by dc was greater than five orders of magnitude, one of the best results reported for diamond FETs. The gate leak current of aluminum oxide MISFETs is three orders of magnitude less than that of conventional CaF2 MISFETs. These characteristics indicate that aluminum oxide gate insulators are suitable for high reliability power device applications of diamond MISFETs.

    元の言語English
    記事番号112117
    ジャーナルApplied Physics Letters
    88
    発行部数11
    DOI
    出版物ステータスPublished - 2006

      フィンガープリント

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    これを引用

    Hirama, K., Miyamoto, S., Matsudaira, H., Yamada, K., Kawarada, H., Chikyo, T., Koinuma, H., Hasegawa, K., & Umezawa, H. (2006). Characterization of diamond metal-insulator-semiconductor field-effect transistors with aluminum oxide gate insulator. Applied Physics Letters, 88(11), [112117]. https://doi.org/10.1063/1.2186072