Characterization of diamond particles and films formed by plasma-assisted chemical vapour deposition using high-voltage electron microscopy

Hiroshi Kawarada, King Sheng Mar, Junichi Suzuki, Toshimichi Ito, Hirotaro Mori, Hiroshi Fujita, Akio Hiraki

研究成果: Article査読

22 被引用数 (Scopus)

抄録

The internal and interfacial structures of diamond particles and films on Si substrates formed by plasma-assisted chemical vapour deposition have been investigated by high-voltage transmission electron microscopy. The feature of line defects–micro-twin lamellae or stacking faults–in a diamond particle indicates the concentric crystal growth originated from one nucleus. The particles are observed to be in direct contact with the Si substrate around the nucleation site within the resolution limit. The particles are stacked up to form a diamond film.

本文言語English
ページ(範囲)L1903-L1906
ジャーナルJapanese journal of applied physics
26
11 A
DOI
出版ステータスPublished - 1987 11
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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