The internal and internal structures of diamond particles and films on Si substrates formed by plasma-assisted chemical vapor deposition have been investigated by high-voltage transmission electron microscopy. The feature of line defects - micro-twin lamellae or stacking faults - in a diamond particle indicates the concentric crystal growth originated from one nucleus. The particles are observed to be in direct contact with the Si substrate around the nucleation site within the resolution limit. The particles are stacked up to form a diamond film.
|ジャーナル||Japanese Journal of Applied Physics, Part 2: Letters|
|出版ステータス||Published - 1987 11 1|
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