Characterization of diamond surface-channel metal-semiconductor field-effect transistor with device simulation

Engineering & Materials Science

• MESFET devices 100%
• Diamonds 61%
• Characterization (materials science) 53%
• Transconductance 27%
• Hole concentration 14%
• Hydrogen 12%
• Drain current 9%
• MOSFET devices 8%
• Field effect transistors 8%
• Silicon 6%

Physics & Astronomy

• diamonds 48%
• field effect transistors 48%
• characterization 34%
• metals 31%
• transconductance 25%
• simulation 23%
• hydrogen 9%
• metal oxide semiconductors 7%
• direct current 5%
• insulators 5%
• saturation 5%
• silicon 4%