Characterization of hafnium and zirconium silicate films fabricated by plasma-enhanced chemical vapor deposition

H. Kato, T. Nango, T. Miyagawa, T. Katagiri, Y. Ohki

研究成果: Conference contribution

4 被引用数 (Scopus)

抄録

Recently, hafnium, and zirconium silicates have been considered to be attractive for new materials with high permittivity We have tried to deposit these silicate films by plasma-enhanced chemical vapor deposition (PECVD). In this report, we discuss the electrical properties and chemical structure of the deposited films.

本文言語English
ホスト出版物のタイトルExtended Abstracts of International Workshop on Gate Insulator, IWGI 2001
出版社Institute of Electrical and Electronics Engineers Inc.
ページ166-169
ページ数4
ISBN(電子版)4891140216, 9784891140212
DOI
出版ステータスPublished - 2001
イベントInternational Workshop on Gate Insulator, IWGI 2001 - Tokyo, Japan
継続期間: 2001 11 12001 11 2

出版物シリーズ

名前Extended Abstracts of International Workshop on Gate Insulator, IWGI 2001

Other

OtherInternational Workshop on Gate Insulator, IWGI 2001
国/地域Japan
CityTokyo
Period01/11/101/11/2

ASJC Scopus subject areas

  • 電子工学および電気工学
  • 電子材料、光学材料、および磁性材料

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