Characterization of high indium content metamorphic InGaAs/InAlAs modulation-doped heterostructures

Shin Ichiro Gozu, Tomohiro Kita, Yuuki Sato, Syoji Yamada, Masaaki Tomizawa

研究成果: Conference article

18 引用 (Scopus)

抄録

We have studied electronic and structural characterizations of high indium content metamorphic InGaAs/InAlAs modulation-doped heterostructures. An improved low-temperature electron mobility of μe = 5.45 × 105 cm2 V s in [1̄ 1 0] was confirmed for a directed Hall-bar sample when Si-doped InAlAs layer was slightly etched. In addition, in-plane mobility anisotropy of 40% between [1 1 0] and [1̄ 1 0] directions was confirmed. This anisotropy seems to be originated from the different undulation period between [1̄ 1 0] and [1 1 0] directions. We theoretically calculated electron mobility taking both alloy disorder scattering and background impurity scattering into account. It is found that the calculated and experimental values are in good agreement.

元の言語English
ページ(範囲)155-160
ページ数6
ジャーナルJournal of Crystal Growth
227-228
DOI
出版物ステータスPublished - 2001 7 1
外部発表Yes
イベント11th International Conference on Molecular Beam Epitaxy - Bijing, China
継続期間: 2000 9 112000 9 15

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Indium
Electron mobility
electron mobility
indium
Heterojunctions
Anisotropy
Modulation
Scattering
modulation
anisotropy
scattering
disorders
Impurities
impurities
electronics
Temperature
Direction compound

ASJC Scopus subject areas

  • Condensed Matter Physics

これを引用

Characterization of high indium content metamorphic InGaAs/InAlAs modulation-doped heterostructures. / Gozu, Shin Ichiro; Kita, Tomohiro; Sato, Yuuki; Yamada, Syoji; Tomizawa, Masaaki.

:: Journal of Crystal Growth, 巻 227-228, 01.07.2001, p. 155-160.

研究成果: Conference article

Gozu, Shin Ichiro ; Kita, Tomohiro ; Sato, Yuuki ; Yamada, Syoji ; Tomizawa, Masaaki. / Characterization of high indium content metamorphic InGaAs/InAlAs modulation-doped heterostructures. :: Journal of Crystal Growth. 2001 ; 巻 227-228. pp. 155-160.
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AU - Gozu, Shin Ichiro

AU - Kita, Tomohiro

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AU - Tomizawa, Masaaki

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N2 - We have studied electronic and structural characterizations of high indium content metamorphic InGaAs/InAlAs modulation-doped heterostructures. An improved low-temperature electron mobility of μe = 5.45 × 105 cm2 V s in [1̄ 1 0] was confirmed for a directed Hall-bar sample when Si-doped InAlAs layer was slightly etched. In addition, in-plane mobility anisotropy of 40% between [1 1 0] and [1̄ 1 0] directions was confirmed. This anisotropy seems to be originated from the different undulation period between [1̄ 1 0] and [1 1 0] directions. We theoretically calculated electron mobility taking both alloy disorder scattering and background impurity scattering into account. It is found that the calculated and experimental values are in good agreement.

AB - We have studied electronic and structural characterizations of high indium content metamorphic InGaAs/InAlAs modulation-doped heterostructures. An improved low-temperature electron mobility of μe = 5.45 × 105 cm2 V s in [1̄ 1 0] was confirmed for a directed Hall-bar sample when Si-doped InAlAs layer was slightly etched. In addition, in-plane mobility anisotropy of 40% between [1 1 0] and [1̄ 1 0] directions was confirmed. This anisotropy seems to be originated from the different undulation period between [1̄ 1 0] and [1 1 0] directions. We theoretically calculated electron mobility taking both alloy disorder scattering and background impurity scattering into account. It is found that the calculated and experimental values are in good agreement.

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