Characterization of high-quality polycrystalline diamond and its high FET performance

K. Ueda, M. Kasu, Y. Yamauchi, Toshiki Makimoto, M. Schwitters, D. J. Twitchen, G. A. Scarsbrook, S. E. Coe

研究成果: Article

22 引用 (Scopus)

抜粋

We characterized high-quality polycrystalline diamond with large grains and fabricated polycrystalline diamond field effect transistors (FETs). The polycrystalline diamond had (110) preferred orientation, and its typical grain size was ∼ 100 μm. Well-resolved free exciton related emissions were observed at room temperature in cathodoluminescence. The FETs showed extremely high DC and RF performance. The cut-off frequency for current gain (fT) and power gain (fmax) were 45 and 120 GHz, respectively. The maximum drain current (IDS) was 550 mA/mm. These values are the highest among diamond FETs, including those fabricated from single-crystal diamond. These results suggest that high-quality polycrystalline diamond, whose maximum size is 4 in., is very promising for diamond electronic devices.

元の言語English
ページ(範囲)1954-1957
ページ数4
ジャーナルDiamond and Related Materials
15
発行部数11-12 SPEC. ISS.
DOI
出版物ステータスPublished - 2006 11
外部発表Yes

    フィンガープリント

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

これを引用

Ueda, K., Kasu, M., Yamauchi, Y., Makimoto, T., Schwitters, M., Twitchen, D. J., Scarsbrook, G. A., & Coe, S. E. (2006). Characterization of high-quality polycrystalline diamond and its high FET performance. Diamond and Related Materials, 15(11-12 SPEC. ISS.), 1954-1957. https://doi.org/10.1016/j.diamond.2006.07.021