抄録
We investigated the optical, electrical and structural properties of the layer which was implanted with sulfur ion(S +) in 4H-SiC. By using the high temperature ion implantation technique more less residual defects were observed compared with the room temperature ion implantation by Rutherford backscattering spectrometry and channeling(RBS-channeling). After annealing at 1700°C there was no significant difference between the implanted sample and virgin sample in crystallinity within the detection limit of RBS-channeling. From the result of low temperature photoluminescence(LTPL) we could see the photoluminescences, so-called D 1 and D 2 center, originating in the defects formed by ion implantation and post-annealing(∼1700°C) processes and confirmed that their intensities decreased with the increasing of the total dose of S +. The result of Hall effect measurement suggested that the conduction type of S +-implanted layer is n-type and their activation energies were 275meV and 410meV by the fitting of neutrality equation assuming the two activation energies for the hexagonal and cubic lattice sites in 4H-SiC.
本文言語 | English |
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ホスト出版物のタイトル | Materials Research Society Symposium - Proceedings |
編集者 | R.J. Shul, F. Ren, W. Pletschen, M. Murakami |
巻 | 622 |
出版ステータス | Published - 2000 |
外部発表 | はい |
イベント | Wide-Bandgap Electronic Devices - San Francisco, CA, United States 継続期間: 2000 4月 24 → 2000 4月 27 |
Other
Other | Wide-Bandgap Electronic Devices |
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国/地域 | United States |
City | San Francisco, CA |
Period | 00/4/24 → 00/4/27 |
ASJC Scopus subject areas
- 電子材料、光学材料、および磁性材料