Characterization of n-type layer by S + ion implantation in 4H-SiC

Y. Tanaka*, Naoto Kobayashi, H. Okumura, S. Yoshida, M. Hasegawa, M. Ogura, H. Tanoue

*この研究の対応する著者

研究成果: Conference contribution

抄録

We investigated the optical, electrical and structural properties of the layer which was implanted with sulfur ion(S +) in 4H-SiC. By using the high temperature ion implantation technique more less residual defects were observed compared with the room temperature ion implantation by Rutherford backscattering spectrometry and channeling(RBS-channeling). After annealing at 1700°C there was no significant difference between the implanted sample and virgin sample in crystallinity within the detection limit of RBS-channeling. From the result of low temperature photoluminescence(LTPL) we could see the photoluminescences, so-called D 1 and D 2 center, originating in the defects formed by ion implantation and post-annealing(∼1700°C) processes and confirmed that their intensities decreased with the increasing of the total dose of S +. The result of Hall effect measurement suggested that the conduction type of S +-implanted layer is n-type and their activation energies were 275meV and 410meV by the fitting of neutrality equation assuming the two activation energies for the hexagonal and cubic lattice sites in 4H-SiC.

本文言語English
ホスト出版物のタイトルMaterials Research Society Symposium - Proceedings
編集者R.J. Shul, F. Ren, W. Pletschen, M. Murakami
622
出版ステータスPublished - 2000
外部発表はい
イベントWide-Bandgap Electronic Devices - San Francisco, CA, United States
継続期間: 2000 4 242000 4 27

Other

OtherWide-Bandgap Electronic Devices
国/地域United States
CitySan Francisco, CA
Period00/4/2400/4/27

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料

フィンガープリント

「Characterization of n-type layer by S <sup>+</sup> ion implantation in 4H-SiC」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル