Characterization of nanoporous Si thin films obtained by Al-Si phase separation

Kazuhiko Fukutani*, Youhei Ishida, Toshiaki Aiba, Hirokatsu Miyata, Tohru Den

*この研究の対応する著者

研究成果: Article査読

9 被引用数 (Scopus)

抄録

Nanoporous silicon films of ultrahigh pore densities and large surface areas have been fabricated by sputtering an Al-Si target and subsequent removal of the deposited film's Al regions by etching in a sulfuric acid solution. The resulting nanoporous films are mainly composed of amorphous silicon and have cylindrical pores with an average pore density exceeding 1016 pores m2. These nanoporous films can be crystallized by thermal annealing in a H2 atmosphere to improve their electrical properties. The electrical properties of the crystallized nanoporous films, which behave as p -type semiconductors, are very similar to those of electrochemically etched porous Si.

本文言語English
論文番号253112
ページ(範囲)1-3
ページ数3
ジャーナルApplied Physics Letters
87
25
DOI
出版ステータスPublished - 2005
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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