Structural and electrical properties of plasma-deposited silicon nitride (SiN) have been studied. The compositional ratio of Si to N estimated by Auger analysis is found to be uniform in the direction of the film thickness. The numbers of Si-H and N-H bonds of the order of 10**2**1/cm**3 have been obtained bY calculating the vibrational spectra. The two types of trapping states whch are responsible for the Poole-Frenkel conduction are found. the barrier height at the SiN/Si interface is determined. Current transport mechanism through SiN films are quantitatively discussed, and it is shown that the carrier transport is dominated by the Fowler-Nordheim tunneling at low temperatures and by the Poole-Frenkel conduction at high temperatures.
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