CHARACTERIZATION OF PLASMA-DEPOSITED SILICON NITRIDE FILMS.

S. Yokoyama, N. Kajihara, M. Hirose, Y. Osaka, T. Yoshihara, H. Abe

研究成果: Article査読

42 被引用数 (Scopus)

抄録

Structural and electrical properties of plasma-deposited silicon nitride (SiN) have been studied. The compositional ratio of Si to N estimated by Auger analysis is found to be uniform in the direction of the film thickness. The numbers of Si-H and N-H bonds of the order of 10**2**1/cm**3 have been obtained bY calculating the vibrational spectra. The two types of trapping states whch are responsible for the Poole-Frenkel conduction are found. the barrier height at the SiN/Si interface is determined. Current transport mechanism through SiN films are quantitatively discussed, and it is shown that the carrier transport is dominated by the Fowler-Nordheim tunneling at low temperatures and by the Poole-Frenkel conduction at high temperatures.

本文言語English
ページ(範囲)5470-5474
ページ数5
ジャーナルJournal of Applied Physics
51
10
DOI
出版ステータスPublished - 1980 10
外部発表はい

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physics and Astronomy (miscellaneous)

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