Characterization of sol-gel derived Bi4-xlaxTi 3O12 films

Naoki Sugita*, Minoru Osada, Eisuke Tokumitsu

*この研究の対応する著者

研究成果: Article査読

31 被引用数 (Scopus)

抄録

Ferroelectric Bi4Ti3O12 (BIT) and Bi 4-xLaxTi3O12(BLT) (x = 0.25, 0.5, 0.75) films were prepared on Pt/Ti/SiO2 substrates by the sol-gel technique. The P-E hysteresis loop, whose squareness was enhanced more than that of a BIT film's, was obtained for a BLT film with a La composition of 0.75 annealed at 650°C or higher temperatures. A remanent polarization of 13 μC/cm2 and a coercive electric field of 80 kV/cm were obtained. Raman scattering measurements reveal that the crystallization temperature at which a perovskite structure forms decreased with increasing La content. In addition, it is shown that the crystallization process depends on the La content.

本文言語English
ページ(範囲)6810-6813
ページ数4
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
41
11 B
DOI
出版ステータスPublished - 2002 11
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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