Characterization of SWNT-thin-film transistors

Masashi Shiraishi*, Tomohiro Fukao, Shuichi Nakamura, Taishi Takenobu, Y. Iwasa, H. Kataura

*この研究の対応する著者

研究成果: Conference contribution

抄録

Characteristics of network SWNT FETs (SWNT-TFTs) were examined. The SWNTs were dispersed in a solution of dimethylformamide in a narrow bundle structure to form non-aligned arrays, which became channels of FETs. The network-SWNT-FETs produced in this solution process was found to have a mobility of 10.9 cm 2/Vs, ≈ 100 times as high as those reported for other solution-processed organic thin-film FETs formed by solution processes, although the on/off ratio was 102. To improve the low on/off ratio, so-called electrical breakdown was introduced. By this procedure, 1.1 cm2/Vs of mobility and 106 of the on/off ratio were simultaneously achieved.

本文言語English
ホスト出版物のタイトルAIP Conference Proceedings
ページ554-557
ページ数4
786
DOI
出版ステータスPublished - 2005 9 27
外部発表はい
イベントELECTRONIC PROPERTIES OF NOVEL NANOSTRUCTURES: XIX International Winterschool/Euroconference on Electronic Properties of Novel Materials - Kirchberg, Tirol
継続期間: 2005 3 122005 3 19

Other

OtherELECTRONIC PROPERTIES OF NOVEL NANOSTRUCTURES: XIX International Winterschool/Euroconference on Electronic Properties of Novel Materials
CityKirchberg, Tirol
Period05/3/1205/3/19

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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