Characterization of SWNT-thin-film transistors

Masashi Shiraishi, Tomohiro Fukao, Shuichi Nakamura, Taishi Takenobu, Y. Iwasa, H. Kataura

研究成果: Conference contribution

抄録

Characteristics of network SWNT FETs (SWNT-TFTs) were examined. The SWNTs were dispersed in a solution of dimethylformamide in a narrow bundle structure to form non-aligned arrays, which became channels of FETs. The network-SWNT-FETs produced in this solution process was found to have a mobility of 10.9 cm 2/Vs, ≈ 100 times as high as those reported for other solution-processed organic thin-film FETs formed by solution processes, although the on/off ratio was 102. To improve the low on/off ratio, so-called electrical breakdown was introduced. By this procedure, 1.1 cm2/Vs of mobility and 106 of the on/off ratio were simultaneously achieved.

元の言語English
ホスト出版物のタイトルAIP Conference Proceedings
ページ554-557
ページ数4
786
DOI
出版物ステータスPublished - 2005 9 27
外部発表Yes
イベントELECTRONIC PROPERTIES OF NOVEL NANOSTRUCTURES: XIX International Winterschool/Euroconference on Electronic Properties of Novel Materials - Kirchberg, Tirol
継続期間: 2005 3 122005 3 19

Other

OtherELECTRONIC PROPERTIES OF NOVEL NANOSTRUCTURES: XIX International Winterschool/Euroconference on Electronic Properties of Novel Materials
Kirchberg, Tirol
期間05/3/1205/3/19

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transistors
field effect transistors
thin films
electrical faults
bundles

ASJC Scopus subject areas

  • Physics and Astronomy(all)

これを引用

Shiraishi, M., Fukao, T., Nakamura, S., Takenobu, T., Iwasa, Y., & Kataura, H. (2005). Characterization of SWNT-thin-film transistors. : AIP Conference Proceedings (巻 786, pp. 554-557) https://doi.org/10.1063/1.2103929

Characterization of SWNT-thin-film transistors. / Shiraishi, Masashi; Fukao, Tomohiro; Nakamura, Shuichi; Takenobu, Taishi; Iwasa, Y.; Kataura, H.

AIP Conference Proceedings. 巻 786 2005. p. 554-557.

研究成果: Conference contribution

Shiraishi, M, Fukao, T, Nakamura, S, Takenobu, T, Iwasa, Y & Kataura, H 2005, Characterization of SWNT-thin-film transistors. : AIP Conference Proceedings. 巻. 786, pp. 554-557, ELECTRONIC PROPERTIES OF NOVEL NANOSTRUCTURES: XIX International Winterschool/Euroconference on Electronic Properties of Novel Materials, Kirchberg, Tirol, 05/3/12. https://doi.org/10.1063/1.2103929
Shiraishi M, Fukao T, Nakamura S, Takenobu T, Iwasa Y, Kataura H. Characterization of SWNT-thin-film transistors. : AIP Conference Proceedings. 巻 786. 2005. p. 554-557 https://doi.org/10.1063/1.2103929
Shiraishi, Masashi ; Fukao, Tomohiro ; Nakamura, Shuichi ; Takenobu, Taishi ; Iwasa, Y. ; Kataura, H. / Characterization of SWNT-thin-film transistors. AIP Conference Proceedings. 巻 786 2005. pp. 554-557
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