Characterization of the surface layer on a strained Si wafer by electrochemical methods

Kaoruho Sakata, Masahiro Kato, Nobuhiro Kubo, Takeshi Senda, Koji Izunome, Takayuki Homma

    研究成果: Article

    3 引用 (Scopus)

    抄録

    To assess the surface reactivity of strained Si wafers, open circuit potential (ocp) measurement and scanning surface potential microscopy (SPoM) were carried out. Surface conditions of the wafers were varied by changing the structure of the wafers, i.e., the Ge content of the SiGe underlayer and the thickness of the strained Si layer. The ocp value of the strained Si was negative compared with that of nonstrained Si, and it shifted in the negative direction with an increase in Ge content of the SiGe layer and/or in the thickness of the strained Si layer, indicating that the degree of strain and/or the density of defects at the Si wafer surface affect its reactivity. In addition, the ocp value shifted in the positive direction to reach the value of the nonstrained Si, possibility due to stress relaxation, when the thickness of strained Si exceeds a certain value, which is expected to be the "critical" thickness. The SPoM analysis confirmed that the negative potential shift takes place locally at the surface, whose contrast was associated with the crosshatchlike surface morphology, suggesting that there is nanoscopic difference in strain at the strained surface.

    元の言語English
    ページ(範囲)3785-3788
    ページ数4
    ジャーナルJournal of Physical Chemistry C
    112
    発行部数10
    DOI
    出版物ステータスPublished - 2008 3 13

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    surface layers
    wafers
    Surface potential
    Networks (circuits)
    Microscopic examination
    Stress relaxation
    reactivity
    Surface morphology
    microscopy
    stress relaxation
    Scanning
    Defects
    scanning
    shift
    defects
    Direction compound

    ASJC Scopus subject areas

    • Physical and Theoretical Chemistry
    • Electronic, Optical and Magnetic Materials
    • Surfaces, Coatings and Films
    • Energy(all)

    これを引用

    Characterization of the surface layer on a strained Si wafer by electrochemical methods. / Sakata, Kaoruho; Kato, Masahiro; Kubo, Nobuhiro; Senda, Takeshi; Izunome, Koji; Homma, Takayuki.

    :: Journal of Physical Chemistry C, 巻 112, 番号 10, 13.03.2008, p. 3785-3788.

    研究成果: Article

    Sakata, Kaoruho ; Kato, Masahiro ; Kubo, Nobuhiro ; Senda, Takeshi ; Izunome, Koji ; Homma, Takayuki. / Characterization of the surface layer on a strained Si wafer by electrochemical methods. :: Journal of Physical Chemistry C. 2008 ; 巻 112, 番号 10. pp. 3785-3788.
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    abstract = "To assess the surface reactivity of strained Si wafers, open circuit potential (ocp) measurement and scanning surface potential microscopy (SPoM) were carried out. Surface conditions of the wafers were varied by changing the structure of the wafers, i.e., the Ge content of the SiGe underlayer and the thickness of the strained Si layer. The ocp value of the strained Si was negative compared with that of nonstrained Si, and it shifted in the negative direction with an increase in Ge content of the SiGe layer and/or in the thickness of the strained Si layer, indicating that the degree of strain and/or the density of defects at the Si wafer surface affect its reactivity. In addition, the ocp value shifted in the positive direction to reach the value of the nonstrained Si, possibility due to stress relaxation, when the thickness of strained Si exceeds a certain value, which is expected to be the {"}critical{"} thickness. The SPoM analysis confirmed that the negative potential shift takes place locally at the surface, whose contrast was associated with the crosshatchlike surface morphology, suggesting that there is nanoscopic difference in strain at the strained surface.",
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    AU - Kubo, Nobuhiro

    AU - Senda, Takeshi

    AU - Izunome, Koji

    AU - Homma, Takayuki

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