Chemical bonding properties of cubic III-nitride semiconductors

Kazuhiro Shimada*, Takayuki Sota, Katsuo Suzuki, Hajime Okumura

*この研究の対応する著者

研究成果: Article査読

抄録

We report on the chemical trends of the physical quantities of cubic III nitrides obtained from first-principles calculations on the basis of the density functional theory within the local density approximation. The results are compared to experimental results of the element semiconductors including diamond, and of III-V and II-VI compound semiconductors. It has been found that (a) BN has strong covalent character comparable to diamond, (b) the chemical bonding properties of AIN and GaN are located in the intermediate between that of other III-V and II-VI materials, and (c) the bond angle of InN is easy to bend more than the other typical III-V, II-VI, and I-VII materials.

本文言語English
ページ(範囲)122-123
ページ数2
ジャーナルProgress of Theoretical Physics Supplement
138
DOI
出版ステータスPublished - 2000

ASJC Scopus subject areas

  • 物理学および天文学(その他)

フィンガープリント

「Chemical bonding properties of cubic III-nitride semiconductors」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル