Chemical Etching Properties of Highly Thermal Conductive AIN Ceramics for Electroless Ni-P Metallization

Tetsuya Osaka, Toshiaki Asada, Eiji Nakajima, Ichiro Koiwa

研究成果: Article査読

19 被引用数 (Scopus)

抄録

The adhesion strength between AIN ceramics and electroless plated Ni-P film was investigated from the viewpoint of the chemical etching behavior. It was confirmed that chemical etching proceeds in two stages. The first etching stage is the selective dissolution of the Ca atoms, which are added as a sintering aid. Since the Ca atoms are mainly concentrated at the three grain junctions of triple points, the selective etching preferably proceeds along the triple points of the AIN grains. In this initial etching stage, the adhesion strength of the Ni-P plated film increases with an increase in the amount of the dissolved substrate. The deposition of electroless Ni-P plating at the triple points makes effective anchors of metal film against the substrate. At the second etching stage, the AIN grains also begin to be etched, and thus, the spaces between the grains are widened. In this etching stage, the adhesion strength gradually decreases with an increase in the dissolved amount of the AIN substrate. In conclusion, it is very important to consider the etching morphology and mechanism, including the process of substrate formation (i.e., sintering aid in the substrate) in order to get a higher adhesion strength for the electroless plating metallization.

本文言語English
ページ(範囲)2578-2581
ページ数4
ジャーナルJournal of the Electrochemical Society
135
10
DOI
出版ステータスPublished - 1988 10月

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 再生可能エネルギー、持続可能性、環境
  • 表面、皮膜および薄膜
  • 電気化学
  • 材料化学

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