Chemical short-range order in ion-beam-induced amorphous SiC: Irradiation temperature dependence

Manabu Ishimaru*, In Tae Bae, Akihiko Hirata, Yoshihiko Hirotsu, James A. Valdez, Kurt E. Sickafus

*この研究の対応する著者

研究成果: Article査読

11 被引用数 (Scopus)

抄録

Chemical short-range order of ion-beam-induced amorphous SiC (a-SiC) has been examined by transmission electron microscopy in combination with imaging plate techniques. Single crystals of 6H-SiC were irradiated with 300 keV xenon ions to a fluence of 1015 cm-2 at cryogenic and elevated temperatures. Atomic pair-distribution functions showed that not only heteronuclear (Si-C) bonds but also homonuclear (Si-Si and C-C) bonds exist within the first coordination shell of a-SiC networks. It was found that chemical short-range order of a-SiC depends on the ion irradiation conditions: the amorphous networks became more chemically disorder with decreasing the irradiation temperature.

本文言語English
ページ(範囲)473-475
ページ数3
ジャーナルNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
242
1-2
DOI
出版ステータスPublished - 2006 1月
外部発表はい

ASJC Scopus subject areas

  • 核物理学および高エネルギー物理学
  • 器械工学

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