CIRCUIT DESIGN OF LARGE SCALE DYNAMIC MOS RAM WITH SCALING RELATIONSHIPS.

YASUJI NAGAYAMA, TSUTOMU YOSHIHARA, TAKAO NAKANO, YOSHIMI GAMOU

研究成果: Article

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THE PAPER DEALS WITH A UNIFIED APPROACH TO FABRICATION, DEVICE AND CIRCUIT TECHNIQUES OF THE LSI DYNAMIC MOS RAM, A MEMORY ELEMENT FOR INFORMATION PROCESSING DEVICES. THE ANALYSISIS PRESENTED OF THE SENSITIVITY OF A DYNAMIC-TYPE SENSE CIRCUIT USING A SINGLE TRANSISTOR IN A MEMORY CELL, INCLUDING THE VOLTAGE READ OUT FROM THE MEMORY CELL AND THE COEFFICIENTM DEFINING ITS OPERATING REGION TO CLARIFY DESIGN GUIDELINES AND THE CONDITION FOR STABLE OPERATION OF A LARGE-SCALE RAM SENSE CIRCUIT.

元の言語English
ページ(範囲)82-90
ページ数9
ジャーナルElectron Commun Jpn
V 64
発行部数N 2
出版物ステータスPublished - 1981 2
外部発表Yes

ASJC Scopus subject areas

  • Engineering(all)

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  • これを引用

    NAGAYAMA, YASUJI., YOSHIHARA, TSUTOMU., NAKANO, TAKAO., & GAMOU, YOSHIMI. (1981). CIRCUIT DESIGN OF LARGE SCALE DYNAMIC MOS RAM WITH SCALING RELATIONSHIPS. Electron Commun Jpn, V 64(N 2), 82-90.