CIRCUIT DESIGN OF LARGE SCALE DYNAMIC MOS RAM WITH SCALING RELATIONSHIPS.

YASUJI NAGAYAMA*, TSUTOMU YOSHIHARA, TAKAO NAKANO, YOSHIMI GAMOU

*この研究の対応する著者

研究成果: Article査読

1 被引用数 (Scopus)

抄録

THE PAPER DEALS WITH A UNIFIED APPROACH TO FABRICATION, DEVICE AND CIRCUIT TECHNIQUES OF THE LSI DYNAMIC MOS RAM, A MEMORY ELEMENT FOR INFORMATION PROCESSING DEVICES. THE ANALYSISIS PRESENTED OF THE SENSITIVITY OF A DYNAMIC-TYPE SENSE CIRCUIT USING A SINGLE TRANSISTOR IN A MEMORY CELL, INCLUDING THE VOLTAGE READ OUT FROM THE MEMORY CELL AND THE COEFFICIENTM DEFINING ITS OPERATING REGION TO CLARIFY DESIGN GUIDELINES AND THE CONDITION FOR STABLE OPERATION OF A LARGE-SCALE RAM SENSE CIRCUIT.

本文言語English
ページ(範囲)82-90
ページ数9
ジャーナルElectron Commun Jpn
V 64
N 2
出版ステータスPublished - 1981 2月
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)

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