Clarification of floating-body effects on drive current and short channel effect in deep sub-0.25 μm partially depleted SOI MOSFETs

Takuji Matsumoto*, Shigenobu Maeda, Yuuichi Hirano, Katsumi Eikyu, Yasuo Yamaguchi, Shigeto Maegawa, Masahide Inuishi, Tadashi Nishimura

*この研究の対応する著者

研究成果: Article査読

5 被引用数 (Scopus)

抄録

We point out for the first time that floating-body effects cause the reduction of the saturation drive current in partially depleted (PD) SOI MOSFETs. It is demonstrated that when the channel concentration of the SOI MOSFETs is set higher in order to suppress the increase of the off current caused by floating-body effects, the drive current decreases due to the large body effect. In the conventional SOI structure where the source-drain junction is in contact with the buried oxide, the 0.18 μm floating PD SOI MOSFET suffers around 17% decrease in the drive current under the same threshold voltage (V th) in comparison with body-fixed one. However, floating PD SOI MOSFETs show smaller V th-roll-off. Further considering the short channel effect down to the minimum gate length of 0.16 μm, the current decrease becomes 6%. Also, we propose a floating PD SOI MOSFET with shallow source-drain junction (SSD) structure to suppress the floating-body effects. By using the SSD structure, we confirmed an increase in the drive current.

本文言語English
ページ(範囲)55-60
ページ数6
ジャーナルIEEE Transactions on Electron Devices
49
1
DOI
出版ステータスPublished - 2002 1 1
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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