Classification of the pore structure of n-type silicon and its microstructure

Tetsuya Osaka*, Kako Ogasawara, Shohei Nakahara

*この研究の対応する著者

研究成果: Article査読

31 被引用数 (Scopus)

抄録

Porous silicon samples were grown under various anodization conditions on {100} oriented n-silicon substrates. Scanning and transmission electron microscope observations have shown that the microstructure of porous silicon primarily falls into three categories, which can be classified as single layer, double layer, and large macropore types. These three types differ not only in their microstructural details, but also in luminescence properties. In all three types of samples, the inner surface of pores created by anodization is coated with a low density amorphous material, which contained silicon and oxygen. In addition, all the pore surfaces were roughened by anodization, leaving nanoscale crystalline silicon asperities.

本文言語English
ページ(範囲)3226-3237
ページ数12
ジャーナルJournal of the Electrochemical Society
144
9
DOI
出版ステータスPublished - 1997 9月

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 再生可能エネルギー、持続可能性、環境
  • 表面、皮膜および薄膜
  • 電気化学
  • 材料化学

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