Classification of the pore structure of n-type silicon and its microstructure

Tetsuya Osaka, Kako Ogasawara, Shohei Nakahara

研究成果: Article査読

29 被引用数 (Scopus)


Porous silicon samples were grown under various anodization conditions on {100} oriented n-silicon substrates. Scanning and transmission electron microscope observations have shown that the microstructure of porous silicon primarily falls into three categories, which can be classified as single layer, double layer, and large macropore types. These three types differ not only in their microstructural details, but also in luminescence properties. In all three types of samples, the inner surface of pores created by anodization is coated with a low density amorphous material, which contained silicon and oxygen. In addition, all the pore surfaces were roughened by anodization, leaving nanoscale crystalline silicon asperities.

ジャーナルJournal of the Electrochemical Society
出版ステータスPublished - 1997 9

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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