Closed recycle CVD process for mass production of SOG-Si from MG-Si

Suguru Noda*, Kazunori Hagiwara, Osamu Ichikawa, Katsuaki Tanabe, Takashi Yahiro, Hiroshi Ohkawa, Toshio Osawa, Hiroshi Komiyama


研究成果: Conference article査読

4 被引用数 (Scopus)


"CVD Process with Closed Gas Recycling" is proposed for mass production of SOG-Si from MG-Si. By combining chlorosilane synthesis in the reaction of MG-Si and HCl and Si-CVD from chlorosilanes, a closed system with ideal Si conversion ratio of 100% can be realized with little emission of chloride pollutants. Based on thermodynamic investigation, operating temperatures were set below 900 K for Si etching and above 1200 K for Si-CVD. Si etching showed time dependent natures due to the activation of Si surface, and the rate of activated surfaces was in the order of 1 μm/min (623- 723 K, 0.9×105 Pa, 3.3- 10 mol% HCl/H2). Si growth rate by CVD was also in the same order (1323- 1473 K, 0.1- 1×105 Pa, 0.1- 9 mol% SiHCl3/H2 or SiCl4/H2), which was quantitatively explained by kinetic simulations. This process can be combined with layer transfer processes to form crystalline Si thin films.

ジャーナルConference Record of the IEEE Photovoltaic Specialists Conference
出版ステータスPublished - 2002 12 1
イベント29th IEEE Photovoltaic Specialists Conference - New Orleans, LA, United States
継続期間: 2002 5 192002 5 24

ASJC Scopus subject areas

  • 制御およびシステム工学
  • 産業および生産工学
  • 電子工学および電気工学


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