Closed recycle CVD process for mass production of SOG-Si from MG-Si

Suguru Noda*, Kazunori Hagiwara, Osamu Ichikawa, Katsuaki Tanabe, Takashi Yahiro, Hiroshi Ohkawa, Toshio Osawa, Hiroshi Komiyama

*この研究の対応する著者

研究成果: Conference article査読

4 被引用数 (Scopus)

抄録

"CVD Process with Closed Gas Recycling" is proposed for mass production of SOG-Si from MG-Si. By combining chlorosilane synthesis in the reaction of MG-Si and HCl and Si-CVD from chlorosilanes, a closed system with ideal Si conversion ratio of 100% can be realized with little emission of chloride pollutants. Based on thermodynamic investigation, operating temperatures were set below 900 K for Si etching and above 1200 K for Si-CVD. Si etching showed time dependent natures due to the activation of Si surface, and the rate of activated surfaces was in the order of 1 μm/min (623- 723 K, 0.9×105 Pa, 3.3- 10 mol% HCl/H2). Si growth rate by CVD was also in the same order (1323- 1473 K, 0.1- 1×105 Pa, 0.1- 9 mol% SiHCl3/H2 or SiCl4/H2), which was quantitatively explained by kinetic simulations. This process can be combined with layer transfer processes to form crystalline Si thin films.

本文言語English
ページ(範囲)308-311
ページ数4
ジャーナルConference Record of the IEEE Photovoltaic Specialists Conference
出版ステータスPublished - 2002 12 1
外部発表はい
イベント29th IEEE Photovoltaic Specialists Conference - New Orleans, LA, United States
継続期間: 2002 5 192002 5 24

ASJC Scopus subject areas

  • 制御およびシステム工学
  • 産業および生産工学
  • 電子工学および電気工学

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