Two novel voltage reference using self-biased body effect are discussed in this paper. The proposed circuits based on the weighted difference of two gate-source voltages of two MOSFETs operated in subthreshold region and one of them with forward-biased body effect, can generate two ultra-low reference voltages of 171.1 mV and 243.2 mV with temperature coefficients of 15.6 ppm/°C and 14.8 ppm/°C in a range from -25°C∼80°C, respectively. The voltage line sensitivities are 0.0025%/V and 0.0019%/V. The power supply rejection ratio (PSRR) are -110 dB and -105 dB at 100 Hz. The power dissipations are 0.74 W and 1.4 μW at a 1.4-V power supply. The circuits were designed and simulated in 0.18 μm CMOS technology. The layouts illustrate the chip area are 0.016 mm 2 and 0.014 mm 2.
|ホスト出版物のタイトル||Proceedings of International Conference on ASIC|
|出版ステータス||Published - 2011|
|イベント||2011 IEEE 9th International Conference on ASIC, ASICON 2011 - Xiamen|
継続期間: 2011 10 25 → 2011 10 28
|Other||2011 IEEE 9th International Conference on ASIC, ASICON 2011|
|Period||11/10/25 → 11/10/28|
ASJC Scopus subject areas