CMOS power amplifier with temperature compensation for 79 GHz radar system

Takeshi Yoshida, Kyoya Takano, Chenyang Li, Mizuki Motoyoshi, Kosuke Katayama, Shuhei Amakawa, Minoru Fujishima

研究成果: Conference contribution

9 被引用数 (Scopus)

抄録

We have developed a 79 GHz CMOS power amplifier (PA) with temperature compensation implemented using 40 nm CMOS technology that suppresses the variation of small-signal gain and the degradation of linearity within 0.8 dB in the temperature range from 0 to 100°C. The PA consists of an on-chip temperature sensor and four-stage common-source NMOS amplifiers. The temperature-compensated PA operating at 100°C achieved a small-signal gain of 15.7 dB, a 12 GHz bandwidth and a saturated output power (Psat) of 6.8 dBm with 96.2 mW power consumption at a supply voltage of 1.1 V.

本文言語English
ホスト出版物のタイトル2013 Asia-Pacific Microwave Conference Proceedings, APMC 2013
ページ239-241
ページ数3
DOI
出版ステータスPublished - 2013
外部発表はい
イベント2013 3rd Asia-Pacific Microwave Conference, APMC 2013 - Seoul, Korea, Republic of
継続期間: 2013 11月 52013 11月 8

出版物シリーズ

名前Asia-Pacific Microwave Conference Proceedings, APMC

Conference

Conference2013 3rd Asia-Pacific Microwave Conference, APMC 2013
国/地域Korea, Republic of
CitySeoul
Period13/11/513/11/8

ASJC Scopus subject areas

  • 電子工学および電気工学

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