抄録
Utilizing a combinatorial method, we used spectroscopic ellipsometry to determine the dielectric functions of silver island films over a large range of sizes and morphologies from the percolation threshold down to average particle size smaller than 5 nm. We measured films on silicon substrates with 2 and 20 nm oxide layers and compared the surface-enhanced Raman scattering properties of the films. As expected, the films on 20-nm-thick oxide substrates showed increased Raman counts due to reduced damping of the plasmon resonance; however, the optical absorption was greater in the films on 2 nm oxide. The maximum Raman scattering was observed for average particle diameters of 13.6 and 25 nm and interparticle spacings of 3.3 and 4.1 nm for the 2 and 20 nm oxide substrates, respectively. The use of a combinatorial method resulted in significantly reduced uncertainties by avoiding multiple sample preparations and allowed unambiguous identification of optimal film parameters for the different substrates.
| 元の言語 | English |
|---|---|
| ページ（範囲） | 4820-4828 |
| ページ数 | 9 |
| ジャーナル | Journal of Physical Chemistry C |
| 巻 | 113 |
| 発行部数 | 12 |
| DOI | |
| 出版物ステータス | Published - 2009 3 26 |
| 外部発表 | Yes |
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ASJC Scopus subject areas
- Physical and Theoretical Chemistry
- Electronic, Optical and Magnetic Materials
- Surfaces, Coatings and Films
- Energy(all)
これを引用
Combinatorial surface-enhanced raman spectroscopy and spectroscopic ellipsometry of silver Island films. / Oates, T. W H; Sugime, Hisashi; Noda, Suguru.
：: Journal of Physical Chemistry C, 巻 113, 番号 12, 26.03.2009, p. 4820-4828.研究成果: Article
}
TY - JOUR
T1 - Combinatorial surface-enhanced raman spectroscopy and spectroscopic ellipsometry of silver Island films
AU - Oates, T. W H
AU - Sugime, Hisashi
AU - Noda, Suguru
PY - 2009/3/26
Y1 - 2009/3/26
N2 - Utilizing a combinatorial method, we used spectroscopic ellipsometry to determine the dielectric functions of silver island films over a large range of sizes and morphologies from the percolation threshold down to average particle size smaller than 5 nm. We measured films on silicon substrates with 2 and 20 nm oxide layers and compared the surface-enhanced Raman scattering properties of the films. As expected, the films on 20-nm-thick oxide substrates showed increased Raman counts due to reduced damping of the plasmon resonance; however, the optical absorption was greater in the films on 2 nm oxide. The maximum Raman scattering was observed for average particle diameters of 13.6 and 25 nm and interparticle spacings of 3.3 and 4.1 nm for the 2 and 20 nm oxide substrates, respectively. The use of a combinatorial method resulted in significantly reduced uncertainties by avoiding multiple sample preparations and allowed unambiguous identification of optimal film parameters for the different substrates.
AB - Utilizing a combinatorial method, we used spectroscopic ellipsometry to determine the dielectric functions of silver island films over a large range of sizes and morphologies from the percolation threshold down to average particle size smaller than 5 nm. We measured films on silicon substrates with 2 and 20 nm oxide layers and compared the surface-enhanced Raman scattering properties of the films. As expected, the films on 20-nm-thick oxide substrates showed increased Raman counts due to reduced damping of the plasmon resonance; however, the optical absorption was greater in the films on 2 nm oxide. The maximum Raman scattering was observed for average particle diameters of 13.6 and 25 nm and interparticle spacings of 3.3 and 4.1 nm for the 2 and 20 nm oxide substrates, respectively. The use of a combinatorial method resulted in significantly reduced uncertainties by avoiding multiple sample preparations and allowed unambiguous identification of optimal film parameters for the different substrates.
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UR - http://www.scopus.com/inward/citedby.url?scp=65249098966&partnerID=8YFLogxK
U2 - 10.1021/jp8097654
DO - 10.1021/jp8097654
M3 - Article
AN - SCOPUS:65249098966
VL - 113
SP - 4820
EP - 4828
JO - Journal of Physical Chemistry C
JF - Journal of Physical Chemistry C
SN - 1932-7447
IS - 12
ER -