抄録
Utilizing a combinatorial method, we used spectroscopic ellipsometry to determine the dielectric functions of silver island films over a large range of sizes and morphologies from the percolation threshold down to average particle size smaller than 5 nm. We measured films on silicon substrates with 2 and 20 nm oxide layers and compared the surface-enhanced Raman scattering properties of the films. As expected, the films on 20-nm-thick oxide substrates showed increased Raman counts due to reduced damping of the plasmon resonance; however, the optical absorption was greater in the films on 2 nm oxide. The maximum Raman scattering was observed for average particle diameters of 13.6 and 25 nm and interparticle spacings of 3.3 and 4.1 nm for the 2 and 20 nm oxide substrates, respectively. The use of a combinatorial method resulted in significantly reduced uncertainties by avoiding multiple sample preparations and allowed unambiguous identification of optimal film parameters for the different substrates.
本文言語 | English |
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ページ(範囲) | 4820-4828 |
ページ数 | 9 |
ジャーナル | Journal of Physical Chemistry C |
巻 | 113 |
号 | 12 |
DOI | |
出版ステータス | Published - 2009 3月 26 |
外部発表 | はい |
ASJC Scopus subject areas
- 電子材料、光学材料、および磁性材料
- エネルギー(全般)
- 物理化学および理論化学
- 表面、皮膜および薄膜