抄録
We fabricated a Pnp AlGaN/GaN heterojunction bipolar transistor and investigated its common-emitter current-voltage characteristics. The device structures were grown by metalorganic vapor phase epitaxy on a sapphire substrate. The Al mole fraction in an AlGaN emitter layer was 0.18. The thickness of the GaN base layer was 0.12 μm and its Si doping concentration was as high as 1×1019cm-3, so its base resistance decreased two orders of magnitude compared with the reported Npn nitride heterojunction bipolar transistors. The transistor showed good saturation current-voltage characteristics and the maximum common-emitter current gain of 28 was obtained for collector current of -2×10-5A at room temperature.
本文言語 | English |
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ページ(範囲) | 3841-3843 |
ページ数 | 3 |
ジャーナル | Applied Physics Letters |
巻 | 80 |
号 | 20 |
DOI | |
出版ステータス | Published - 2002 5月 20 |
外部発表 | はい |
ASJC Scopus subject areas
- 物理学および天文学(その他)