Common-emitter current-voltage characteristics of a pnp GaN bipolar junction transistor

Kazuhide Kumakura; Toshiki Makimoto; Naoki Kobayashi

doi:10.1063/1.1447593

Common-emitter current-voltage characteristics of a pnp GaN bipolar junction transistor

Kazuhide Kumakura^*, Toshiki Makimoto, Naoki Kobayashi

^*この研究の対応する著者

研究成果: Article › 査読

15 被引用数 (Scopus)

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We fabricated a pnp GaN bipolar junction transistor and investigated its common-emitter current-voltage characteristics. The device structures were grown by metalorganic vapor phase epitaxy on a sapphire substrate. The base thickness was 0.12 μm and its doping concentration was estimated to be lower than mid-10¹⁷cm^-3. We have obtained a maximum common-emitter current gain of 50 at room temperature for collector current ranging from -10^-5 to -10^-4A.

本文言語	English
ページ（範囲）	1225-1227
ページ数	3
ジャーナル	Applied Physics Letters
巻	80
号	7
DOI	https://doi.org/10.1063/1.1447593
出版ステータス	Published - 2002 2月 18
外部発表	はい

ASJC Scopus subject areas

物理学および天文学（その他）

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10.1063/1.1447593

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Common-emitter current-voltage characteristics of a pnp GaN bipolar junction transistor

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