Common-emitter current-voltage characteristics of a pnp GaN bipolar junction transistor

Kazuhide Kumakura; Toshiki Makimoto; Naoki Kobayashi

doi:10.1063/1.1447593

Common-emitter current-voltage characteristics of a pnp GaN bipolar junction transistor

Kazuhide Kumakura^*, Toshiki Makimoto, Naoki Kobayashi

^*この研究の対応する著者

研究成果 › 査読

15 被引用数 (Scopus)

抄録

We fabricated a pnp GaN bipolar junction transistor and investigated its common-emitter current-voltage characteristics. The device structures were grown by metalorganic vapor phase epitaxy on a sapphire substrate. The base thickness was 0.12 μm and its doping concentration was estimated to be lower than mid-10¹⁷cm^-3. We have obtained a maximum common-emitter current gain of 50 at room temperature for collector current ranging from -10^-5 to -10^-4A.

本文言語	English
ページ（範囲）	1225-1227
ページ数	3
ジャーナル	Applied Physics Letters
巻	80
号	7
DOI	https://doi.org/10.1063/1.1447593
出版ステータス	Published - 2002 2 18
外部発表	はい

ASJC Scopus subject areas

物理学および天文学（その他）

文献へのアクセス

10.1063/1.1447593

他のファイルとリンク

引用スタイル

@article{4aa4b97ca047457e8d833bef28460d65,

title = "Common-emitter current-voltage characteristics of a pnp GaN bipolar junction transistor",

abstract = "We fabricated a pnp GaN bipolar junction transistor and investigated its common-emitter current-voltage characteristics. The device structures were grown by metalorganic vapor phase epitaxy on a sapphire substrate. The base thickness was 0.12 μm and its doping concentration was estimated to be lower than mid-1017cm-3. We have obtained a maximum common-emitter current gain of 50 at room temperature for collector current ranging from -10-5 to -10-4A.",

author = "Kazuhide Kumakura and Toshiki Makimoto and Naoki Kobayashi",

year = "2002",

month = feb,

day = "18",

doi = "10.1063/1.1447593",

language = "English",

volume = "80",

pages = "1225--1227",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "7",

}

TY - JOUR

T1 - Common-emitter current-voltage characteristics of a pnp GaN bipolar junction transistor

AU - Kumakura, Kazuhide

AU - Makimoto, Toshiki

AU - Kobayashi, Naoki

PY - 2002/2/18

Y1 - 2002/2/18

N2 - We fabricated a pnp GaN bipolar junction transistor and investigated its common-emitter current-voltage characteristics. The device structures were grown by metalorganic vapor phase epitaxy on a sapphire substrate. The base thickness was 0.12 μm and its doping concentration was estimated to be lower than mid-1017cm-3. We have obtained a maximum common-emitter current gain of 50 at room temperature for collector current ranging from -10-5 to -10-4A.

AB - We fabricated a pnp GaN bipolar junction transistor and investigated its common-emitter current-voltage characteristics. The device structures were grown by metalorganic vapor phase epitaxy on a sapphire substrate. The base thickness was 0.12 μm and its doping concentration was estimated to be lower than mid-1017cm-3. We have obtained a maximum common-emitter current gain of 50 at room temperature for collector current ranging from -10-5 to -10-4A.

UR - http://www.scopus.com/inward/record.url?scp=79956023983&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79956023983&partnerID=8YFLogxK

U2 - 10.1063/1.1447593

DO - 10.1063/1.1447593

M3 - Article

AN - SCOPUS:79956023983

VL - 80

SP - 1225

EP - 1227

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 7

ER -

Common-emitter current-voltage characteristics of a pnp GaN bipolar junction transistor

抄録

ASJC Scopus subject areas

文献へのアクセス

他のファイルとリンク

フィンガープリント

引用スタイル