抄録
We fabricated a pnp GaN bipolar junction transistor and investigated its common-emitter current-voltage characteristics. The device structures were grown by metalorganic vapor phase epitaxy on a sapphire substrate. The base thickness was 0.12 μm and its doping concentration was estimated to be lower than mid-1017cm-3. We have obtained a maximum common-emitter current gain of 50 at room temperature for collector current ranging from -10-5 to -10-4A.
本文言語 | English |
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ページ(範囲) | 1225-1227 |
ページ数 | 3 |
ジャーナル | Applied Physics Letters |
巻 | 80 |
号 | 7 |
DOI | |
出版ステータス | Published - 2002 2月 18 |
外部発表 | はい |
ASJC Scopus subject areas
- 物理学および天文学(その他)