Common-emitter current-voltage characteristics of a pnp GaN bipolar junction transistor

Kazuhide Kumakura*, Toshiki Makimoto, Naoki Kobayashi

*この研究の対応する著者

研究成果査読

15 被引用数 (Scopus)

抄録

We fabricated a pnp GaN bipolar junction transistor and investigated its common-emitter current-voltage characteristics. The device structures were grown by metalorganic vapor phase epitaxy on a sapphire substrate. The base thickness was 0.12 μm and its doping concentration was estimated to be lower than mid-1017cm-3. We have obtained a maximum common-emitter current gain of 50 at room temperature for collector current ranging from -10-5 to -10-4A.

本文言語English
ページ(範囲)1225-1227
ページ数3
ジャーナルApplied Physics Letters
80
7
DOI
出版ステータスPublished - 2002 2 18
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

フィンガープリント

「Common-emitter current-voltage characteristics of a pnp GaN bipolar junction transistor」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル