We fabricated a pnp GaN bipolar junction transistor and investigated its common-emitter current-voltage characteristics. The device structures were grown by metalorganic vapor phase epitaxy on a sapphire substrate. The base thickness was 0.12 μm and its doping concentration was estimated to be lower than mid-1017cm-3. We have obtained a maximum common-emitter current gain of 50 at room temperature for collector current ranging from -10-5 to -10-4A.
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