抄録
Comparative photoluminescence and excitation spectra of ZnSe/GaAs epilayers grown by molecular beam epitaxy (MBE) and hot-wall epitaxy (HWE) show likewise features in the exciton energy regime. Two strain-split components of the free exciton are observed, as well as characteristic sets of transitions from or into ground and excited states of acceptor- and donor-bound excitons. However, all respective lines are shifted to lower energies in the HWE samples, due to the increased thermally induced strain as a consequence of the substrate temperatures being enhanced compared to the MBE growth. Whereas the dominant donors are of the same nature in both kinds of samples, specific acceptor centers are incorporated in the HWE films. Although the MBE-grown layers are of superior quality, it is shown that HWE under optimized growth conditions is a cheap and useful alternative to obtain ZnSe epilayers of reliable properties.
本文言語 | English |
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ページ(範囲) | 5630-5635 |
ページ数 | 6 |
ジャーナル | Journal of Applied Physics |
巻 | 68 |
号 | 11 |
DOI | |
出版ステータス | Published - 1990 12月 1 |
外部発表 | はい |
ASJC Scopus subject areas
- 物理学および天文学(全般)