Comparative optical investigations of ZnSe/GaAs epilayers grown by molecular beam and hot-wall epitaxy

G. Kudlek, N. Presser, J. Gutowski, K. Hingerl, H. Sitter, S. M. Durbin, D. R. Menke, M. Kobayashi, R. L. Gunshor

研究成果: Review article査読

17 被引用数 (Scopus)

抄録

Comparative photoluminescence and excitation spectra of ZnSe/GaAs epilayers grown by molecular beam epitaxy (MBE) and hot-wall epitaxy (HWE) show likewise features in the exciton energy regime. Two strain-split components of the free exciton are observed, as well as characteristic sets of transitions from or into ground and excited states of acceptor- and donor-bound excitons. However, all respective lines are shifted to lower energies in the HWE samples, due to the increased thermally induced strain as a consequence of the substrate temperatures being enhanced compared to the MBE growth. Whereas the dominant donors are of the same nature in both kinds of samples, specific acceptor centers are incorporated in the HWE films. Although the MBE-grown layers are of superior quality, it is shown that HWE under optimized growth conditions is a cheap and useful alternative to obtain ZnSe epilayers of reliable properties.

本文言語English
ページ(範囲)5630-5635
ページ数6
ジャーナルJournal of Applied Physics
68
11
DOI
出版ステータスPublished - 1990 12 1
外部発表はい

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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