Comparative study of excitonic recombination radiation from diamonds grown by CVD and HP/HT methods

T. Murakami*, K. Nakamura, S. Yamashita, S. Takeuchi, M. Murakawa, H. Kawarada

*この研究の対応する著者

研究成果: Article査読

1 被引用数 (Scopus)

抄録

Intensive and dominant free-exciton (FE) recombination radiation is observed from chamber flame (CF) diamonds, and high pressure and high temperature (HP/HT) diamonds. The FE recombination radiation associated with one TO phonon (FETO) intensity from CF and HP/HT diamonds increases as temperature decreases from room temperature until 120 and 110 K, respectively, and saturates below these temperatures which are 30-50 K lower than the temperature at which the FETO intensity from microwave plasma chemical vapor deposition (MPCVD) diamond saturates. The crystallinity of CF, HP/HT and MPCVD diamonds is discussed by the saturation temperature depending on the non-radiative transition probability caused by intrinsic dissociation of FE. Increase of the FETO intensity is observed from an oxygen-terminated surface. The FETO intensity from oxygen-terminated surface of CF isolated particle is about three times larger than that from hydrogen-terminated surface. The change of the FETO intensity is explained by the difference in the surface electronic structure and/or the surface band bending between the oxygen-and hydrogen-terminated surfaces.

本文言語English
ページ(範囲)1668-1673
ページ数6
ジャーナルDiamond and Related Materials
6
11
DOI
出版ステータスPublished - 1997 10月
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 化学 (全般)
  • 機械工学
  • 材料化学
  • 電子工学および電気工学

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