Competition between quantum-confined Stark effect and free-carrier screening effect in AlGaN/GaN multiple quantum wells

T. Fujita, T. Toizumi, Y. Nakazato, A. Tackeuchi*, T. Chinone, J. H. Liang, M. Kajikawa

*この研究の対応する著者

研究成果: Conference article査読

2 被引用数 (Scopus)

抄録

The competition between the quantum-confined Stark effect (QCSE) and the free-carrier screening effect in AlGaN/GaN multiple quantum wells (MQWs) has been investigated by time-resolved photoluminescence (PL) measurement. AlGaN/GaN MQWs is a promising material for the next-generation ultraviolet light-emitting diodes and laser devices. The large changes in the PL energy and the decay time are observed with changing carrier density. We show that the energy shift and the change in decay time are explained well by the free-carrier screening effect that compensates for the internal electric field.

本文言語English
ページ(範囲)356-359
ページ数4
ジャーナルPhysica Status Solidi (C) Current Topics in Solid State Physics
5
1
DOI
出版ステータスPublished - 2008
イベント15th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors, HCIS15 - Tokyo, Japan
継続期間: 2007 7 232007 7 27

ASJC Scopus subject areas

  • 凝縮系物理学

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