TY - JOUR
T1 - Competition between quantum-confined Stark effect and free-carrier screening effect in AlGaN/GaN multiple quantum wells
AU - Fujita, T.
AU - Toizumi, T.
AU - Nakazato, Y.
AU - Tackeuchi, A.
AU - Chinone, T.
AU - Liang, J. H.
AU - Kajikawa, M.
PY - 2008
Y1 - 2008
N2 - The competition between the quantum-confined Stark effect (QCSE) and the free-carrier screening effect in AlGaN/GaN multiple quantum wells (MQWs) has been investigated by time-resolved photoluminescence (PL) measurement. AlGaN/GaN MQWs is a promising material for the next-generation ultraviolet light-emitting diodes and laser devices. The large changes in the PL energy and the decay time are observed with changing carrier density. We show that the energy shift and the change in decay time are explained well by the free-carrier screening effect that compensates for the internal electric field.
AB - The competition between the quantum-confined Stark effect (QCSE) and the free-carrier screening effect in AlGaN/GaN multiple quantum wells (MQWs) has been investigated by time-resolved photoluminescence (PL) measurement. AlGaN/GaN MQWs is a promising material for the next-generation ultraviolet light-emitting diodes and laser devices. The large changes in the PL energy and the decay time are observed with changing carrier density. We show that the energy shift and the change in decay time are explained well by the free-carrier screening effect that compensates for the internal electric field.
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U2 - 10.1002/pssc.200776584
DO - 10.1002/pssc.200776584
M3 - Conference article
AN - SCOPUS:45749130117
SN - 1862-6351
VL - 5
SP - 356
EP - 359
JO - Physica Status Solidi C: Conferences
JF - Physica Status Solidi C: Conferences
IS - 1
T2 - 15th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors, HCIS15
Y2 - 23 July 2007 through 27 July 2007
ER -