In order to apply SiO2-SiO2 bonding with hydrofluoric acid (HF bonding) for micro-electro-mechanical systems (MEMS) fabrication, the optimal bonding conditions were examined under different temperature, HF concentration and bonding time. The necessary HF concentration and the necessary time for bonding are reduced by elevating the bonding temperature. The time for bonding was reduced from 24 h at room temperature to 30 min at 80 °C, 60 min at 60 °C under the conditions of 0.5 wt.% HF concentration and 1.3 MPa applied pressure. The bonding time is comparable to that of anodic bonding. Reliability of the HF bonding was confirmed by the results of temperature cyclic tests and thermal shock tests. A long term stability of the bonded sample was also evaluated by helium (He) leak detection. The measured He leak rate was less than 2.0×10-9 atm cm3/s which is much smaller than that calculated value through component materials of the sample. A novel quartz UV detection micro flow cell for chemical analysis having Si shade structure was fabricated by the HF bonding. The absorbance unit for UV absorption detection of the cell was improved remarkably.
|ジャーナル||Sensors and Actuators, A: Physical|
|出版ステータス||Published - 2000 5月 22|
|イベント||The 10th International Conference on Solid-State Sensors and Actuators TRANSDUCERS '99 - Sendai, Jpn|
継続期間: 1999 6月 7 → 1999 6月 10
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