Conductance quantization and synaptic behavior in a Ta 2O 5-based atomic switch

Tohru Tsuruoka, Tsuyoshi Hasegawa, Kazuya Terabe, Masakazu Aono

研究成果: Article査読

115 被引用数 (Scopus)

抄録

Quantized conductance was observed in a cation-migration-based resistive switching memory cell with a simple metalinsulatormetal (MIM) structure using a thin Ta 2O 5 layer. The observed conductance changes are attributed to the formation and dissolution of a metal filament with an atomic point contact of different integer multiples in the Ta 2O 5 layer. The results demonstrate that atomic point contacts can be realized in an oxide-based MIM structure that functions as a nanogap-based atomic switch (Terabe etal 2005 Nature 433 47). By applying consecutive voltage pulses at periodic intervals of different times, we also observed an effect analogous to the long-term potentiation of biological synapses, which shows that the oxide-based atomic switch has potential for use as an essential building block of neural computing systems.

本文言語English
論文番号435705
ジャーナルNanotechnology
23
43
DOI
出版ステータスPublished - 2012 11 2
外部発表はい

ASJC Scopus subject areas

  • バイオエンジニアリング
  • 化学 (全般)
  • 材料科学(全般)
  • 材料力学
  • 機械工学
  • 電子工学および電気工学

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