Conductivity and field effect transistor of La2@C80 metallofullerene

Shin ichiro Kobayashi*, Satoshi Mori, Satoru Iida, Hiroaki Ando, Taishi Takenobu, Yasujiro Taguchi, Akihiko Fujiwara, Atsushi Taninaka, Hisanori Shinohara, Yoshihiro Iwasa

*この研究の対応する著者

研究成果: Article査読

114 被引用数 (Scopus)

抄録

We first demonstrate a field-effect-transistor operation of dimetallofullerene La2@C80 with the icosahedral cage symmetry. The thin-film device showed an n-type behavior with a mobility of 1.1 × 10-4 cm2/V s at room temperature under high vacuum. Taking the nature of LUMO into account, the n-type behavior indicates an occurrence of carrier conduction through encapsulated La ions. The low mobility, suggesting an intermolecular hopping mechanism, is ascribed to the intrinsic and extrinsic reasons, which are discussed in the text.

本文言語English
ページ(範囲)8116-8117
ページ数2
ジャーナルJournal of the American Chemical Society
125
27
DOI
出版ステータスPublished - 2003 7月 9
外部発表はい

ASJC Scopus subject areas

  • 化学 (全般)

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