Cone structure formation by preferred growth of random nuclei in chemical vapor deposited epitaxial silicon films

Suguru Noda*, Yuya Kajikawa, Hiroshi Komiyama

*この研究の対応する著者

研究成果査読

抄録

The cone structure formation in epitaxial Si films produced by chemical vapor deposition (CVD) was reported. Measures to prevent cone formation were proposed by studying the cause of the different growth rates between the cone and the film. The shape of the cone was analyzed to precisely determine the growth rate of each crystallographic plane.

本文言語English
ページ(範囲)87-89
ページ数3
ジャーナルAdvanced Materials
14
9
出版ステータスPublished - 2002 5 3
外部発表はい

ASJC Scopus subject areas

  • 材料科学(全般)
  • 材料力学
  • 機械工学

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