Alpha-sexithienyl (alpha-6T) was synthesized from alpha-terthienyl and deposited as thin films by vacuum evaporation onto tin oxide coated glass slides. Schottky junctions were then realized by evaporating aluminium dots on top of the alpha-sexithienyl layer. The metal-semiconductor diodes thus obtained show a rectifying ratio of more than 100 at 1 V.A barrier height of ca. 1.0 eV was determined from the direct current-voltage characteristic. Impedance measurements on Al/alpha-6T and Au/alpha-6T structures gave an acceptor concentration of 4 × 1017 cm-3, a conductivity of 2 × 10-7 S cm-1 and a carrier mobility of 3 × 10-6 cm2Vs. Carrier transport parameters of semiconducting alpha-6T are thus very similar to those of undoped polythiophene.
|出版ステータス||Published - 1988 9月|
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