Consideration of atom movement during Si surface reconstruction

I. Ohdomari*, T. Watanabe, K. Kumamoto, T. Hoshino

*この研究の対応する著者

研究成果: Article査読

5 被引用数 (Scopus)

抄録

Si(111) surface reconstructions are classified into two families, the 2 x 2 family (2 x 2, c2 x 4, c2 x 8 and √3 x √3) and n x n DAS family. By in-situ atomic scale observation of Si(111) surface reconstruction and by a statistical argument on the nucleation of a daughter phase in Si(111) matrix, we have found that the 2 x 2 family is a result of random motion of adatoms on a Si(111)-1 x 1 substrate, while the n x n DAS family can never be formed only by the movement of adatoms but some cooperative movement of substrate Si atoms is necessary.

本文言語English
ページ(範囲)245-258
ページ数14
ジャーナルPhase Transitions
62
4 SEC. A
出版ステータスPublished - 1997 12月 1

ASJC Scopus subject areas

  • 器械工学
  • 材料科学(全般)

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