Contact resistance modulation in carbon nanotube devices investigated by four-probe experiments

Takayoshi Kanbara*, Taishi Takenobu, Tetsuo Takahashi, Yoshihiro Iwasa, Kazuhito Tsukagoshi, Yoshinobu Aoyagi, Hiromichi Kataura

*この研究の対応する著者

研究成果: Article査読

18 被引用数 (Scopus)

抄録

The contact resistance (Rcont) between nanotube and metal electrodes was directly measured in a four-terminal configuration of field-effect transistors for individual single-walled carbon nanotube (SWNT) bundles and a multiwalled carbon nanotube (MWNT). Both Rcont and the nanotube resistance (RNT) in a semiconducting SWNT device drastically changed with gate voltage, while Rcont, being more than one-order smaller than Rcont in metallic SWNTs and MWNTs, was almost constant against the gate voltage. Carriers introduced either by gate voltage or chemical doping induced a rapid decrease in Rcont compared with the resistance of semiconducting SWNTs.

本文言語English
論文番号053118
ページ(範囲)1-3
ページ数3
ジャーナルApplied Physics Letters
88
5
DOI
出版ステータスPublished - 2006
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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