Control of carrier collection efficiency in n+p diode with retrograde well and epitaxial layers

Takehisa Kishimoto*, Mikio Takai, Yoshikazu Ohno, Tadashi Nishimura, Masahide Inuishi

*この研究の対応する著者

研究成果: Article査読

4 被引用数 (Scopus)

抄録

The effect of buried implanted layers against carrier collection has been investigated by ion-beam-induced-current (IBIC) measurement. The IBIC measurement revealed that the retrograde well structure is more effective in suppressing soft errors than are conventional well structures in epitaxial substrates. The collection of charge carriers induced by 1.3 MeV proton microprobe irradiation could be reduced by a buried layer formed at a different boron dose. The carrier collection efficiency of the diode with a twin well (i.e., retrograde well) with a higher dose can be reduced to 50% that of a diode with a twin wells in an epitaxial layer.

本文言語English
ページ(範囲)3460-3462
ページ数3
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
36
6 A
DOI
出版ステータスPublished - 1997 6月
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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