Control of carrier collection efficiency in n+p diode with retrograde well and epitaxial layers

Takehisa Kishimoto, Mikio Takai, Yoshikazu Ohno, Tadashi Nishimura, Masahide Inuishi

研究成果: Article

4 引用 (Scopus)

抄録

The effect of buried implanted layers against carrier collection has been investigated by ion-beam-induced-current (IBIC) measurement. The IBIC measurement revealed that the retrograde well structure is more effective in suppressing soft errors than are conventional well structures in epitaxial substrates. The collection of charge carriers induced by 1.3 MeV proton microprobe irradiation could be reduced by a buried layer formed at a different boron dose. The carrier collection efficiency of the diode with a twin well (i.e., retrograde well) with a higher dose can be reduced to 50% that of a diode with a twin wells in an epitaxial layer.

元の言語English
ページ(範囲)3460-3462
ページ数3
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
36
発行部数6 A
出版物ステータスPublished - 1997 6
外部発表Yes

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Epitaxial layers
Induced currents
Electric current measurement
Ion beams
Diodes
diodes
Charge carriers
ion beams
Boron
dosage
Protons
proton irradiation
Irradiation
charge carriers
boron
Substrates

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Engineering(all)

これを引用

Control of carrier collection efficiency in n+p diode with retrograde well and epitaxial layers. / Kishimoto, Takehisa; Takai, Mikio; Ohno, Yoshikazu; Nishimura, Tadashi; Inuishi, Masahide.

:: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 巻 36, 番号 6 A, 06.1997, p. 3460-3462.

研究成果: Article

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AU - Inuishi, Masahide

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KW - Dynamic random-access memory

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KW - High-energy ion-implantation

KW - Ion-beam-induced current

KW - Nuclear microprobe

KW - Soft error

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