Control of radical species in microwave plasma chemical vapor deposition

I. Kato, T. Yoneda, T. Matsushita, M. Yamashita

研究成果: Article

抜粋

The spatial distributions of electron temperature and density in pure Ar plasma in a double-tubed coaxial-line type microwave plasma chemical vapor deposition (CVD) system were measured using the probe method. It was found that the electron temperature and electron density dropped sharply in an area 4 cm from the edge of the discharge tube and they decreased slowly in an area farther away from the forementioned area. SiH4 gas was dissociated in Ar plasma, and the electron temperature and density of the plasma were varied by changing the location of the SiH4 gas inlet. As a result, it was found that the fragmentation pattern of radical species could be varied by changing the location of the SiH4 gas inlet.

元の言語English
ページ(範囲)97-104
ページ数8
ジャーナルElectronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi)
78
発行部数10
出版物ステータスPublished - 1995 10

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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