Control of the Nucleation Layers of (110)-Oriented ZnTe Thin Film Growth on r-Plane and S-Plane Sapphire Nanofaceted Substrates

Shotaro Kobayashi*, Masakazu Kobayashi

*この研究の対応する著者

研究成果: Article査読

抄録

The nucleation process of ZnTe thin films on sapphire substrates with a nanofaceted structure has been investigated. The nucleation process refers to three processes: low-temperature buffer layer deposition, buffer layer annealing, and migration enhanced epitaxy (MEE) layer formation. The r- and S-plane nanofaceted substrate on m-plane (1−100) sapphire was used to prepare ZnTe (110) layers. To obtain a high-quality ZnTe(110) thin film, selective nucleation on only the S-nanofacet surface was investigated. The initial growth processes were carefully studied. By optimizing the annealing time and significantly increasing the thickness of the MEE growth layers, the selectivity of ZnTe to the S-nanofacet surface was improved. Introduction of Zn-beam irradiation during annealing was effective to form a ZnTe thin film from the S-plane, and, as a result, a ZnTe(110) thin film with good crystallinity was successfully fabricated. In this paper, growth nuclei were characterized by field emission scanning electron microscopy (SEM), and the crystallinity of the thin film was evaluated by the X-ray diffraction (XRD) pole figure and the θ–2θ measurement.

本文言語English
ジャーナルJournal of Electronic Materials
DOI
出版ステータスAccepted/In press - 2022

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学
  • 材料化学

フィンガープリント

「Control of the Nucleation Layers of (110)-Oriented ZnTe Thin Film Growth on r-Plane and S-Plane Sapphire Nanofaceted Substrates」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル