Control of the porous structure of n-type silicon and its electroluminescence properties

Tetsuya Osaka*, Kako Ogasawara, Minoru Katsunuma, Toshiyuki Momma



4 被引用数 (Scopus)


During the galvanostatic preparation of n-type porous silicon samples, the saturated photocurrent density was found to be the key factor determining the structure of the porous layer, which was either a homogeneously nanoporous monolayer or a double layer consisting of a nanoporous top layer and a macroporous underlayer. The electroluminescence (EL) properties of two different samples with the different layer structures showed a difference in the peak wavelength range of the spectral dependence on negative bias. The EL spectra from the samples with the double layer structure were observed over a larger spectral range than that of the samples with the monolayer structure. These results suggest that the luminescence wavelength range of n-type porous silicon can be changed by adjusting the saturated photocurrent density during anodization. Furthermore, an attempt was made to explain the blue-shift phenomenon of the EL wavelength with an increase in applied negative bias, on the basis of the correlation between the porous layer structure and the luminescence wavelength.

ジャーナルJournal of Electroanalytical Chemistry
出版ステータスPublished - 1995 10月 31

ASJC Scopus subject areas

  • 分析化学
  • 化学工学(全般)
  • 電気化学


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