Control of the porous structure of n-type silicon and its electroluminescence properties

Tetsuya Osaka, Kako Ogasawara, Minoru Katsunuma, Toshiyuki Momma

研究成果: Article査読

4 被引用数 (Scopus)

抄録

During the galvanostatic preparation of n-type porous silicon samples, the saturated photocurrent density was found to be the key factor determining the structure of the porous layer, which was either a homogeneously nanoporous monolayer or a double layer consisting of a nanoporous top layer and a macroporous underlayer. The electroluminescence (EL) properties of two different samples with the different layer structures showed a difference in the peak wavelength range of the spectral dependence on negative bias. The EL spectra from the samples with the double layer structure were observed over a larger spectral range than that of the samples with the monolayer structure. These results suggest that the luminescence wavelength range of n-type porous silicon can be changed by adjusting the saturated photocurrent density during anodization. Furthermore, an attempt was made to explain the blue-shift phenomenon of the EL wavelength with an increase in applied negative bias, on the basis of the correlation between the porous layer structure and the luminescence wavelength.

本文言語English
ページ(範囲)69-75
ページ数7
ジャーナルJournal of Electroanalytical Chemistry
396
1-2
DOI
出版ステータスPublished - 1995 10 31

ASJC Scopus subject areas

  • Analytical Chemistry
  • Chemical Engineering(all)
  • Electrochemistry

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