TY - JOUR
T1 - Corporate-feed slotted waveguide array antenna in the 350-GHz band by silicon process
AU - Tekkouk, Karim
AU - Hirokawa, Jiro
AU - Oogimoto, Kazuki
AU - Nagatsuma, Tadao
AU - Seto, Hiroyuki
AU - Inoue, Yoshiyuki
AU - Saito, Mikiko
N1 - Publisher Copyright:
© 1963-2012 IEEE.
PY - 2017/1
Y1 - 2017/1
N2 - A corporate-feed slotted waveguide array antenna with broadband characteristics in terms of gain and reflection in the 350-GHz band is proposed. To improve the etching accuracy of the thin laminated plates with the conventional diffusion bonding process, a new fabrication process has been developed, where the etching accuracy is lower than ± 5μm. In this process, the laminated plates are made with silicon wafers and etched by deep reactive ion etcher process. These are gold plated then bonded with the diffusion bonding process. The estimated effective conductivity of the gold plated wafer is 1.6 × 107 S/m. The loss per unit length is 1.1 dB/cm. A 16 × 16 element array antenna has been designed and fabricated in the 350-GHz band with the proposed process. The broadband characteristic in terms of the antenna gain is demonstrated for the first time by measurement in this frequency band. The 3-dB down gain bandwidth is 50.8 GHz in simulation and is 44.6 GHz in measurement.
AB - A corporate-feed slotted waveguide array antenna with broadband characteristics in terms of gain and reflection in the 350-GHz band is proposed. To improve the etching accuracy of the thin laminated plates with the conventional diffusion bonding process, a new fabrication process has been developed, where the etching accuracy is lower than ± 5μm. In this process, the laminated plates are made with silicon wafers and etched by deep reactive ion etcher process. These are gold plated then bonded with the diffusion bonding process. The estimated effective conductivity of the gold plated wafer is 1.6 × 107 S/m. The loss per unit length is 1.1 dB/cm. A 16 × 16 element array antenna has been designed and fabricated in the 350-GHz band with the proposed process. The broadband characteristic in terms of the antenna gain is demonstrated for the first time by measurement in this frequency band. The 3-dB down gain bandwidth is 50.8 GHz in simulation and is 44.6 GHz in measurement.
KW - Corporate-feed waveguide
KW - Deep reactive ion etcher (DRIE) process
KW - Diffusion bonding process
KW - Micromachining
KW - Silicon process
KW - Slotted waveguide array
KW - Submillimeter wave antennas
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U2 - 10.1109/TAP.2016.2631132
DO - 10.1109/TAP.2016.2631132
M3 - Article
AN - SCOPUS:85009227333
VL - 65
SP - 217
EP - 225
JO - IEEE Transactions on Antennas and Propagation
JF - IEEE Transactions on Antennas and Propagation
SN - 0018-926X
IS - 1
M1 - 7750593
ER -