In the originally published article, the following values were presented incorrectly: 1) The values of the Si impurity concentration ([Si]) and the electron concentration (n) are slightly erroneous for the heavily Si-doped GaAsN, which are described as 6 × 1019 cm–3 and 9 × 1018 cm–3, respectively. The correct values of them are 2 × 1019 cm–3 and 6 × 1018 cm–3, respectively. Figure 1 and 2 with the correct values are presented below. 2) The value of n is applied for the evaluation of electron effective mass (me*) in the paper. The correct values of the decreased energy of the bandgap narrowing (ΔEBGN) and the increased energy of the Burstein-Moss effect (Efn) are 120 meV and 140 meV instead of 140 meV and 160 meV, respectively. Consequently, for the heavily Si-doped GaAsN, the correct value of me* is 0.11m0 instead of 0.098m0, where m0 is the electron mass. Figure 2 with the correct value is presented below. 1 Figure (Figure presented.) PL spectra of heavily Si-doped GaAsN with [Si] of 2 × 1019 cm−3 and [N] of 0.6% as a function of temperature. Black arrows indicate PL peak energy on each PL spectrum. 2 Figure (Figure presented.) Temperature dependence of PL peak energy for heavily Si-doped GaAsN with [Si] of 2 × 1019 cm−3 and [N] of 0.6% and moderately Si-doped GaAsN with [Si] of 1 × 1018 cm−3 and [N] of 0.7%. The authors state that these errors do not change the scientific conclusions of the paper in any way and apologize for any confusion this may have caused.
ASJC Scopus subject areas
- 化学 (全般)