Correlation between static random access memory power-up state and transistor variation

Kiyoshi Takeuchi, Tomoko Mizutani, Takuya Saraya, Hirofumi Shinohara, Masaharu Kobayashi, Toshiro Hiramoto

研究成果: Article査読

7 被引用数 (Scopus)

抄録

The correlation between the static random access memory (SRAM) power-up state (i.e., state 0 or 1 immediately after the power supply is turned on) and cell transistor variation is systematically studied by circuit simulations and mismatch space partitioning. It is revealed that, while both the mismatches of pFETs (pull-up) and nFETs (pull-down and access) contribute, their relative importance changes depending on the voltage ramping speed. The static retention noise margin well correlates with the power-up state only if the ramping speed is sufficiently low. Otherwise, pull-up transistor mismatch dominates the power-up state determination owing to the interference of capacitive current and asymmetrical capacitive coupling of the storage nodes to the ground and power supply.

本文言語English
論文番号04CD03
ジャーナルJapanese journal of applied physics
56
4
DOI
出版ステータスPublished - 2017 4月

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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