Correlation between the photoluminescence lifetime and defect density in bulk and epitaxial ZnO

T. Koida, S. F. Chichibu, A. Uedono, A. Tsukazaki, M. Kawasakib, T. Sota, Y. Segawa, H. Koinuma

研究成果: Article査読

218 被引用数 (Scopus)

抄録

The correlation between the defect density and photoluminescence lifetime in bulk and epitaxial ZnO was studied. With the increase of the nonradiative PL lifetime (τnr), free excitonic PL intensity increased naturally. It was found that the single point defects did not solely governed the nonradiative recombination, but certain defect species introduced by the presence of VZn such as vacancy complexes.

本文言語English
ページ(範囲)532-534
ページ数3
ジャーナルApplied Physics Letters
82
4
DOI
出版ステータスPublished - 2003 1 27

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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