Coupled Monte Carlo simulation of transient electron-phonon transport in nanoscale devices

Yoshinari Kamakura*, Nubuya Mori, Kenji Taniguchi, Tomofumi Zushi, Takanobu Watanabe

*この研究の対応する著者

研究成果: Conference contribution

6 被引用数 (Scopus)

抄録

Using a coupled Monte Carlo method for solving both electron and phonon Boltzmann transport equations, the transient electrothermal behaviors of nanoscale Si n-i-n device are simulated. The nonequilibrium optical phonon distribution is characterized by a temperature different from that of the acoustic phonons, and these two temperatures show different characteristics not only in the steady state, but also in transient conditions. It has been also suggested that the simulated transient response of the phonon temperatures can be practically described by the equivalent thermal circuit model, which is useful for, e.g., projecting the NBTI lifetime during the realistic circuit operations.

本文言語English
ホスト出版物のタイトル15th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2010
ページ89-92
ページ数4
DOI
出版ステータスPublished - 2010 12月 6
イベント15th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2010 - Bologna, Italy
継続期間: 2010 9月 62010 9月 8

出版物シリーズ

名前International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Conference

Conference15th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2010
国/地域Italy
CityBologna
Period10/9/610/9/8

ASJC Scopus subject areas

  • 電子工学および電気工学
  • コンピュータ サイエンスの応用
  • モデリングとシミュレーション

フィンガープリント

「Coupled Monte Carlo simulation of transient electron-phonon transport in nanoscale devices」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル