TY - JOUR
T1 - Critical layer thickness study in In0.75Ga0.25As/In0.5Al0.5As pseudomorphic resonant tunneling diode structure grown on GaAs substrates
AU - Gozu, Shin Ichiro
AU - Kita, Tomohiro
AU - Kikutani, Tomoyuki
AU - Yamada, Syoji
PY - 2001/7
Y1 - 2001/7
N2 - We have studied critical layer thickness (CLT) in an In0.75Ga0.25As resonant tunneling diode structure grown on a GaAs substrate via an InAlAs step-graded buffer (SGB) with two types of inverse step(IS)-SGB. We have observed red or blue shift in photoluminescence spectra and CLT change depending on SGB condition. This change reflects from the difference of residual strain InAlAs SGBs adopted here.
AB - We have studied critical layer thickness (CLT) in an In0.75Ga0.25As resonant tunneling diode structure grown on a GaAs substrate via an InAlAs step-graded buffer (SGB) with two types of inverse step(IS)-SGB. We have observed red or blue shift in photoluminescence spectra and CLT change depending on SGB condition. This change reflects from the difference of residual strain InAlAs SGBs adopted here.
KW - A1. Low dimensional structure
KW - A3. Molecular beam epitaxy
KW - B1. Arsenates
KW - B2. Semiconducting III-V materials
KW - B3. Heterojunction semiconductor devices
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U2 - 10.1016/S0022-0248(01)00656-X
DO - 10.1016/S0022-0248(01)00656-X
M3 - Article
AN - SCOPUS:0035395179
VL - 227
SP - 161
EP - 166
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 228
ER -