抄録
We have studied critical layer thickness (CLT) in an In0.75Ga0.25As resonant tunneling diode structure grown on a GaAs substrate via an InAlAs step-graded buffer (SGB) with two types of inverse step(IS)-SGB. We have observed red or blue shift in photoluminescence spectra and CLT change depending on SGB condition. This change reflects from the difference of residual strain InAlAs SGBs adopted here.
| 元の言語 | English |
|---|---|
| ページ（範囲） | 161-166 |
| ページ数 | 6 |
| ジャーナル | Journal of Crystal Growth |
| 巻 | 227 |
| 発行部数 | 228 |
| DOI | |
| 出版物ステータス | Published - 2001 1 1 |
| 外部発表 | Yes |
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ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry
これを引用
Critical layer thickness study in In0.75Ga0.25As/In0.5Al0.5As pseudomorphic resonant tunneling diode structure grown on GaAs substrates. / Gozu, Shin Ichiro; Kita, Tomohiro; Kikutani, Tomoyuki; Yamada, Syoji.
：: Journal of Crystal Growth, 巻 227, 番号 228, 01.01.2001, p. 161-166.研究成果: Article
}
TY - JOUR
T1 - Critical layer thickness study in In0.75Ga0.25As/In0.5Al0.5As pseudomorphic resonant tunneling diode structure grown on GaAs substrates
AU - Gozu, Shin Ichiro
AU - Kita, Tomohiro
AU - Kikutani, Tomoyuki
AU - Yamada, Syoji
PY - 2001/1/1
Y1 - 2001/1/1
N2 - We have studied critical layer thickness (CLT) in an In0.75Ga0.25As resonant tunneling diode structure grown on a GaAs substrate via an InAlAs step-graded buffer (SGB) with two types of inverse step(IS)-SGB. We have observed red or blue shift in photoluminescence spectra and CLT change depending on SGB condition. This change reflects from the difference of residual strain InAlAs SGBs adopted here.
AB - We have studied critical layer thickness (CLT) in an In0.75Ga0.25As resonant tunneling diode structure grown on a GaAs substrate via an InAlAs step-graded buffer (SGB) with two types of inverse step(IS)-SGB. We have observed red or blue shift in photoluminescence spectra and CLT change depending on SGB condition. This change reflects from the difference of residual strain InAlAs SGBs adopted here.
KW - A1. Low dimensional structure
KW - A3. Molecular beam epitaxy
KW - B1. Arsenates
KW - B2. Semiconducting III-V materials
KW - B3. Heterojunction semiconductor devices
UR - http://www.scopus.com/inward/record.url?scp=0035395179&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0035395179&partnerID=8YFLogxK
U2 - 10.1016/S0022-0248(01)00656-X
DO - 10.1016/S0022-0248(01)00656-X
M3 - Article
AN - SCOPUS:0035395179
VL - 227
SP - 161
EP - 166
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 228
ER -