Critical layer thickness study in In0.75Ga0.25As/In0.5Al0.5As pseudomorphic resonant tunneling diode structure grown on GaAs substrates

Shin Ichiro Gozu, Tomohiro Kita, Tomoyuki Kikutani, Syoji Yamada

研究成果: Article

2 引用 (Scopus)

抄録

We have studied critical layer thickness (CLT) in an In0.75Ga0.25As resonant tunneling diode structure grown on a GaAs substrate via an InAlAs step-graded buffer (SGB) with two types of inverse step(IS)-SGB. We have observed red or blue shift in photoluminescence spectra and CLT change depending on SGB condition. This change reflects from the difference of residual strain InAlAs SGBs adopted here.

元の言語English
ページ(範囲)161-166
ページ数6
ジャーナルJournal of Crystal Growth
227
発行部数228
DOI
出版物ステータスPublished - 2001 1 1
外部発表Yes

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Resonant tunneling diodes
resonant tunneling diodes
Photoluminescence
Buffers
buffers
Substrates
blue shift
red shift
photoluminescence
gallium arsenide

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

これを引用

Critical layer thickness study in In0.75Ga0.25As/In0.5Al0.5As pseudomorphic resonant tunneling diode structure grown on GaAs substrates. / Gozu, Shin Ichiro; Kita, Tomohiro; Kikutani, Tomoyuki; Yamada, Syoji.

:: Journal of Crystal Growth, 巻 227, 番号 228, 01.01.2001, p. 161-166.

研究成果: Article

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AU - Yamada, Syoji

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