Cross-sectional scanning tunneling microscopy characterization of cubic GaN epilayers grown on (001) GaAs

T. Kazama, F. Yasunaga, Y. Taniyasu, A. Jia, Y. Kato, M. Kobayashi, A. Yoshikawa, K. Takahashi

研究成果: Conference article査読

抄録

Atomic scale characterization of cleaved surfaces of cubic GaN (c-GaN) epilayers was established in real space. Using cross-sectional scanning tunneling microscopy (XSTM), c-GaN epilayers grown on GaAs (001) by low pressure MOVPE were investigated. The analysis of STM observations revealed that the atomic arrangement of the c-GaN (11̄0) surface depended on the crystal quality of the c-GaN epilayer. For high quality c-GaN regions, the STM image confirmed that the c-GaN (11̄0) surface was a 1 × 1 reconstruction in analogy to GaAs. On the other hand, for poor quality c-GaN regions, a structure different from the 1 × 1 reconstruction was observed, which was the disordered structure composed of atomic rows along the growth direction. In addition, stacking faults parallel to the c-GaN (111) plane, which gave rise to hexagonal GaN inclusions in the c-GaN epilayer, were characterized in real space.

本文言語English
ページ(範囲)345-350
ページ数6
ジャーナルPhysica Status Solidi (A) Applied Research
180
1
DOI
出版ステータスPublished - 2000 7 1
外部発表はい
イベント3rd International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2000) - Zeuthen/Berlin, Ger
継続期間: 2000 3 62000 3 10

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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