TY - JOUR
T1 - Cross-sectional scanning tunneling microscopy characterization of cubic GaN epilayers grown on (001) GaAs
AU - Kazama, T.
AU - Yasunaga, F.
AU - Taniyasu, Y.
AU - Jia, A.
AU - Kato, Y.
AU - Kobayashi, M.
AU - Yoshikawa, A.
AU - Takahashi, K.
PY - 2000/7
Y1 - 2000/7
N2 - Atomic scale characterization of cleaved surfaces of cubic GaN (c-GaN) epilayers was established in real space. Using cross-sectional scanning tunneling microscopy (XSTM), c-GaN epilayers grown on GaAs (001) by low pressure MOVPE were investigated. The analysis of STM observations revealed that the atomic arrangement of the c-GaN (11̄0) surface depended on the crystal quality of the c-GaN epilayer. For high quality c-GaN regions, the STM image confirmed that the c-GaN (11̄0) surface was a 1 × 1 reconstruction in analogy to GaAs. On the other hand, for poor quality c-GaN regions, a structure different from the 1 × 1 reconstruction was observed, which was the disordered structure composed of atomic rows along the growth direction. In addition, stacking faults parallel to the c-GaN (111) plane, which gave rise to hexagonal GaN inclusions in the c-GaN epilayer, were characterized in real space.
AB - Atomic scale characterization of cleaved surfaces of cubic GaN (c-GaN) epilayers was established in real space. Using cross-sectional scanning tunneling microscopy (XSTM), c-GaN epilayers grown on GaAs (001) by low pressure MOVPE were investigated. The analysis of STM observations revealed that the atomic arrangement of the c-GaN (11̄0) surface depended on the crystal quality of the c-GaN epilayer. For high quality c-GaN regions, the STM image confirmed that the c-GaN (11̄0) surface was a 1 × 1 reconstruction in analogy to GaAs. On the other hand, for poor quality c-GaN regions, a structure different from the 1 × 1 reconstruction was observed, which was the disordered structure composed of atomic rows along the growth direction. In addition, stacking faults parallel to the c-GaN (111) plane, which gave rise to hexagonal GaN inclusions in the c-GaN epilayer, were characterized in real space.
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U2 - 10.1002/1521-396X(200007)180:1<345::AID-PSSA345>3.0.CO;2-R
DO - 10.1002/1521-396X(200007)180:1<345::AID-PSSA345>3.0.CO;2-R
M3 - Conference article
AN - SCOPUS:0034224387
VL - 180
SP - 345
EP - 350
JO - Physica Status Solidi (A) Applied Research
JF - Physica Status Solidi (A) Applied Research
SN - 0031-8965
IS - 1
T2 - 3rd International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2000)
Y2 - 6 March 2000 through 10 March 2000
ER -